四能级原子系统中量子相干增强的Kerr非线性效应的研究

应用密度矩阵方程计算了四能级原子系统中三阶非线性极化率随信号光和探针光频率失谐的变化关系。结果表明，由于量子干涉对信号光强度的敏感性，使四能级原子介质的交叉Kerr非线性作用大大增强，与三能级系统相比，四能级原子介质的Kerr非线性系数可增强两个数量级。     

Scaling impacted structures

Summary The problem of non-scalability of structures under impact loads caused by strain-rate effects is solved in this article by properly correcting the impact velocity. The technique relies on the use of an alternative dimensionless basis, together with a mathematical model which allows the calculation of a correction factor for the impact velocity. This new velocity, when applied to the model, makes it to assure the satisfaction of the scaling laws. The indirect similitude method detailed here is applied to two strain-rate sensitive structures, a double plate under in-plane impact and a beam subjected to a blast load. The results show a very good agreement so that the model and a prototype made from strain rate sensitive materials behave the same.accepted for publication 3 March 2004     

Aharonov–Bohm oscillations observed in nanoscale open-dot structures fabricated in an InAs surface inversion layer

We fabricated nanoscale open-dot structures in an InAs surface inversion layer using an atomic-force-microscope oxidation process. Due to its superior nanofabrication capability, small open-dot structures with the feature size ranging between 100 and 300 nm were successfully fabricated. The magnetoresistance signal measured at 4.2 K showed reproducible fluctuations and a periodic oscillation component that varies in both amplitude and periodicity depending on the dot size. We show that the period of the oscillations corresponds to that of the Aharonov–Bohm effect and propose that the possible mechanism for the oscillations is due to the formation of a one-dimensional electron channel enclosing the open-dot structure as a result of the electron transfer from the InAs oxide to InAs.     

Quantum Hall effect in back-gated InAs/GaSb heterostructures under a tilted magnetic field

We investigate the quantum Hall effect (QHE) in the InAs/GaSb hybridized electron–hole system grown on a conductive InAs substrate which act as a back-gate. In these samples, the electron density is constant and the hole density is controlled by the gate-voltage. Under a magnetic field perpendicular to the sample plane, the QHE appears along integer Landau-level (LL) filling factors of the net-carriers, where the net-carrier density is the difference between the electron and hole densities. In addition, longitudinal resistance maxima corresponding to the crossing of the extended states of the original electron and hole LLs make the QHE regions along integer-ν_net discontinuous. Under tilted magnetic fields, these R_xx maxima disappear in the high magnetic field region. The results show that the in-plane magnetic field component enhances the electron–hole hybridization and the formation of minigaps at LL crossings.     

Rashba polarization in HgCdTe inversion layers at large depletion charges

The Rashba effect in metal–insulator–semiconductor (MIS) structures based on zero-gap HgCdTe is investigated experimentally and theoretically over a wide doping range N_A–N_D=3×10¹⁵–3×10¹⁸ cm⁻³. Increase of doping enlarges the magnitude of the effect at the same 2D concentration and strengthens a gate-voltage dependence of the Rashba splitting. The results demonstrate values of Rashba polarization as high as P_R0.5 and a capability to control the Rashba effect strength at constant electron concentration.     

Anomalies in the Absorption and Reflection of a High-Power Ultrashort Laser Pulse by a Plasma with a Solid-State Density

The patterns of absorption and reflection of an ultrashort laser pulse by a plasma with a solid-state density, which are realized in the mode of the normal skin effect, are studied. It is shown that a decrease in low-power pulse duration shorter than the period corresponding to the fundamental frequency of radiation leads to an increase in the absorption coefficient. If the pulse power is so high as to provide electron heating during a time shorter than the reciprocal fundamental frequency, nonlinear suppression of absorption takes place and the spectrum of the reflected radiation contains odd harmonics of the fundamental frequency.     

Electrode “edge effects” analyzed by the Green function method

An exact method based on Green's equation is used to find the diffusion-controlled faradaic current for certain electrode geometries that incorporate edges and vertices. Thereby the magnitudes of the time-independent current density associated with angled electrode/electrode and electrode/insulator junctions are calculated. As well, the square-root-of-time-dependent currents associated with vertices, receive attention. These terms extend to longer times, the Cottrell formulation appropriate for short times. Though most of the problems solved here have been tackled previously, the novel Green function approach is shown to be straightforward and intuitive.     

非相干辐照对LiNbO3:Fe晶体光折变非线性的影响与控制作用

研究了非相干辐照对LiNbO3:Fe晶体中从自散焦到自聚焦的动态转换过程的影响和控制作用.无论是从前向还是从背向加入非相干辐照，都能加快自散焦、自聚焦过程以及从自散焦到自聚焦的转换过程，增大折射率的变化值.当非相干辐照以一定的时间间隔重复辐照在晶体上时，透射功率能迅速地上升和下降，具有明显的开关效应.这种在非相干辐照控制下折射率的迅速改变有望应用于全光学开关器件. 关键词： 非相干辐照 光伏效应 自散焦 自聚焦     

Kinetics and mechanism of free-surface vaporization of zinc, cadmium and mercury oxides analyzed by the third-law method

On the basis of critical comparison of experimental and theoretical values of the E parameter and investigation of the retardation effect of oxygen on the evaporation rate of ZnO, CdO and HgO, it was concluded that the dissociative evaporation of ZnO and HgO proceeds with releasing of atomic oxygen (O) as a primary product of decomposition. By contrast, the mechanism of dissociative evaporation of CdO corresponds to the equilibrium reaction with releasing of molecular oxygen (O₂) as a primary product of decomposition. As was shown, this difference in mechanisms is not related with interatomic OO distances in these oxides. From the analysis of crystal structure for 12 different oxides, which evaporate with releasing of atomic oxygen, and for 13 compounds, which evaporate with releasing of molecular oxygen, it was revealed that the first mechanism is observed for all oxides with the cubic crystal structure. It was proposed that a decisive role in this difference belongs to a local symmetry in the position of O atoms.     

Software Cold Test Simulation of Coupled Cavity Slow-Wave Structure in Millimeter Wave TWT

In this paper, the software cold-test simulation method to obtain RF dispersion, interaction impedance by MAFIA software is discussed considering effect of the conducting barrel in the millimeter-wave TWT. The dispersion simulation result is obtained more consistent with experiment data than the method that ignoring effect of the conducting barrel. By changing the structure parameter, high frequency characteristic will be affected. The change relationship of high frequency characteristic with structure parameter is obtained. The different calculation methods of the interaction impedance are discussed. These results are received and are consistent with experiment data.